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Research Group "Festkörperelektronik, TU Wien"
(Ao.Univ.Prof. Dr. Dionyz Pogany)

Head of the research group:
Last name:Pogany
First name(s):Dionyz
Title (leading):Ao.Univ.Prof. Dr.
Institution:Vienna University of Technology
Organizational unit:Institut füt Festkörperelektronik
Street address:Floragasse 7
Postal code:1040
Assignments to Research Areas:
Research area(s):
  • Nano Electronics
  • Opto Electronics
  • Solid State Physics
Assignments to Fields of Work According to the Austrian System of Science Areas:
Field(s) of work:
  • Nanotechnology (210006)
  • Optics (103021)
  • Physical electronics (1214)
  • Solid state physics (103009)
Data Acquisition:
Date of the data acquisition:25.05.2011
Data acquisition period:from: 2005   up to including: 2009
Research Group at the Time of the Data Acquisition:
Scientific group members:
6 Persons
Dr. Sergey Bychikhin
Dr. Jan Kuzmik
Dipl. Ing. Clemens Ostermaier
Dipl. Ing. Michael Heer
Mag. Wasinee Mamanee
Mag. Gianmauro Pozzovivo
Percentage project-funded:100
Scientific Output in the Above Data Acquisition Period:
Number of publications:52
Five most important publications:
  1. D. Pogany, S. Bychikhin, M. Denison, P. Rodin, N. Jensen, G. Groos, M. Stecher, E. Gornik, Thermally-driven motion of current filaments in ESD protection devices, Solid. St. Electronics, 2005, vol.49, no.3, 2005, 421-429.
  2. S. Bychikhin, L.K.J. Vandamme, D. Pogany, G. Meneghesso, E. Zanoni, "Low frequency noise sources in as-prepared and aged GaN - based light emitting diodes" J. Appl. Phys, vol.97, 123714-1/-7, 2005.
  3. W. Mamanee, D. Johnsson, P. Rodin, S. Bychikhin, V. Dubec, M. Stecher, E. Gornik and D. Pogany, "Interaction of traveling current filaments and its relation to a non-trivial thermal breakdown scenario in avalanching bipolar transistor", J. Appl. Phys. 105, 084501-1-5 (2009)
  4. C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, M. Schmid, L. Tóth, B. Pecz, J.-F. Carlin, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, and J. Kuzmik, "Metal-related Gate Sinking due to Interfacial Oxygen Layer in Ir/InAlN High Electron Mobility Transistors", Applied Phys. Lett., 96, 263515 (2010).
  5. D. Pogany, D. Johnsson, S. Bychikhin, K. Esmark, P. Rodin, M. Stecher, E. Gornik and H. Gossner, "Measuring Holding Voltage Related to Homogeneous Current Flow in Wide ESD Protection Structures Using Multi-Level-TLP", IEEE Trans. Electron. Dev., vol.58, no.2, pp. 411-418.
Five most important talks:
  1. D. Johnsson, W. Mamanee, S. Bychikhin, D. Pogany, E. Gornik, M. Stecher, "Second breakdown in bipolar ESD protection devices during low current long duration stress and its relation to moving current-tubes", Proc. IRPS (International Reliability Physics Symposium) 2008, April 27-May 1, 2008, Phoenix, USA, p. 240-246
  2. D. Pogany, D. Johnsson, S. Bychikhin, K. Esmark, P. Rodin, E. Gornik, M. Stecher, H. Gossner, "Nonlinear dynamics approach in modeling of the on-state-spreading - related voltage and current transients in 90nm CMOS silicon controlled rectifiers, IEDM Technical Digest, 2009, Baltimore, (International Electron Device Meeting), USA, 7-9 Dec. 2009, p.509-512.
  3. E. Kohn, M. Alomari, A. Denisenko, M. Dipalo, D. Maier, F. Meddjoub, C. Pietzka, S. Delage, M.-A. di Forte-Poisson, E. Morvan, N. Sarazin, J.-C. Jacquet, C. Dua, J.-F. Carlin, N. Grandjean, M.A. Py, M. Gonschorek, J. Kuzmik, D. Pogany, G. Pozzovivo, C. Ostermaeir, L. Toth,B. Pecz, J.-C. De Jaeger, C. Gaquiere, K. Cico, K. Fröhlich, A.I. Georgakilas, E. Iliopulos, G. Konstantinidis,C. Giesen, M. Heuken, B. Schineller, "InAlN/GaN heterostructures for microwave power and beyond", IEDM Technical Digest, 2009, Baltimore, USA, 7-9 Dec. 2009, p.173-176.
  4. S. Bychikhin, L. K. J. Vandamme, J. Kuzmik, G. Meneghesso, S. Levada, E. Zanoni, D. Pogany, Accelerated aging of GaN light emitting diodes studied by 1/f and RTS noise, Proc. Int. Conf on noise in Phys. Salamanca, Spain 2005, Ed. T. Gonzales, J. Mateos, D. Pardo, pp.709-712.
Projects and Funding Granted in the Above Data Acquisition Period:
Competitive projects:
  • FFG + industry partners:
    SIDRA (Safe IC robust design for robust applications)
    Laufzeit: 2005 - 2007; Mittel: 280 kEuro
  • FP6 EU:
    ULTRAGAN (InAlN/GaN heterostructure technology for ultra high power microwave transistors)
    Laufzeit: 2001 - 2005; Mittel: 263kEuro
  • FP7 EU:
    MORGAN (Materials for robust gallium nitride)
    Laufzeit: 2008 -; Mittel: 312 kEuro
  • FFG + industry partners:
    SPOT2 (deep submicron smart power technologies)
    Laufzeit: 2007 - 2010; Mittel: 350kEuro
Commissioned projects:
  • Zahlreiche bilaterale Projekte mit Infineon Technologies, ON semiconductors, ...
Research Topics:
Current research topics:
  • Experimental study of current density patterns and dynamics in semiconductor devices under high current desities and temperatures
  • Defect and transport study in Si and GaN devices
  • Noise spectroscopy of nanoelectronics and optoelectronic devices
Future topics (next 5 years):
  • Control of current density patterns in semiconductor devices
  • Transport and defect studies in nanostructure devices and sensors using noise spectroscopy
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